plastic high power silicon pnp transistor . . . designed for use up to 30 watt audio amplifiers utilizing complementary or quasi complementary circuits. ? dc current gain e h fe = 40 (min) @ i c = 1.0 adc ? bd802 is complementary with bd 795, 797, 799, 801 ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ????? ????? value ???? ???? unit ???????????? ???????????? collectoremitter voltage ????? ????? v ceo ????? ????? 100 ???? ???? vdc ???????????? ???????????? collectorbase voltage ????? ????? v cbo ????? ????? 100 ???? ???? vdc ???????????? ???????????? emitterbase voltage ????? ????? v ebo ????? ????? 5.0 ???? ???? vdc ???????????? ???????????? collector current ????? ????? i c ????? ????? 8.0 ???? ???? adc ???????????? ???????????? base current ????? ????? i b ????? ????? 3.0 ???? ???? adc ???????????? ? ?????????? ? ???????????? total device dissipation t c = 25 c derate above 25 c ????? ? ??? ? ????? p d ????? ? ??? ? ????? 65 522 ???? ? ?? ? ???? watts mw/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ????? ? ??? ? ????? 55 to +150 ???? ? ?? ? ???? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 1.92 ??? ??? c/w ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????? ?????????????????? characteristic ?????? ?????? symbol ???? ???? min ????? ????? max ???? ???? unit ?????????????????? ?????????????????? collectoremitter sustaining voltage* (i c = 0.05 adc, i b = 0) ?????? ?????? bv ceo ???? ???? 100 ????? ????? e ???? ???? vdc ?????????????????? ? ???????????????? ? ?????????????????? collector cutoff current (v cb = 100 vdc, i e = 0) ?????? ? ???? ? ?????? i cbo ???? ? ?? ? ???? e ????? ? ??? ? ????? 0.1 ???? ? ?? ? ???? madc ?????????????????? ? ???????????????? ? ?????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ?????? ? ???? ? ?????? i ebo ???? ? ?? ? ???? e ????? ? ??? ? ????? 1.0 ???? ? ?? ? ???? madc ?????????????????? ? ???????????????? ? ?????????????????? dc current gain (i c = 1.0 a, v ce = 2.0 v) (i c = 3.0 a, v ce = 2.0 v) ?????? ? ???? ? ?????? h fe ???? ? ?? ? ???? 30 15 ????? ? ??? ? ????? e e ???? ? ?? ? ???? ?????????????????? ? ???????????????? ? ?????????????????? collectoremitter saturation voltage* (i c = 3.0 adc, i b = 0.3 adc) ?????? ? ???? ? ?????? v ce(sat) ???? ? ?? ? ???? e ????? ? ??? ? ????? 1.0 ???? ? ?? ? ???? vdc ?????????????????? ?????????????????? baseemitter on voltage* (i c = 3.0 adc, v ce = 2.0 vdc) ?????? ?????? v be(on) ???? ???? e ????? ????? 1.6 ???? ???? vdc ?????????????????? ? ???????????????? ? ? ???????????????? ? ?????????????????? currentgain e bandwidth product (i c = 0.25 adc, v ce = 10 vdc, f = mhz) ?????? ? ???? ? ? ???? ? ?????? f t ???? ? ?? ? ? ?? ? ???? 3.0 ????? ? ??? ? ? ??? ? ????? e ???? ? ?? ? ? ?? ? ???? mhz *pulse test: pulse width 300 m s, duty cycle 2.0. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 9 1 publication order number: bd802/d bd802 8 ampere power transistors pnp silicon 100 volts 65 watts case 221a09 to220ab
bd802 http://onsemi.com 2 figure 1. active region safe operating area 10 1 v ce , collector-emitter voltage (volts) 5 0.5 5 10 50 100 0.05 i c , collector current (amp) t j = 150 c dc 5 ms 100 m s 1 0.1 bd802 the safe operating area curves indicate i c v ce limits below which the device will not enter secondary breakdown. collector load lines for specific circuits must fall within the applicable safe area to avoid causing a catastrophic failure. to insure operation below the maximum t j , powertemperature derating must be observed for both steady state and pulse power conditions. v ce , collector-emitter voltage (volts) figure 2. collector saturation region i b , base current (ma) 2.0 0 0.05 1.6 1.2 0.8 0.4 1.0 2.0 10 70 500 i c = 10 ma 100 ma 1.0 a 0.1 100 20 5.0 t j = 25 c 3.0 30 0.07 300 200 50 7.0 0.2 0.3 0.5 0.7 3.0 a 5.0 0.01 figure 3. normalized dc current gain i c , collector current (amps) 0.1 0.02 0.03 0.05 0.1 0.2 0.3 1.0 4.0 2.0 0.7 0.5 0.2 1.8 figure 4. aono voltage i c , collector current (amps) 0.8 0.6 0.4 0.2 0 v be(sat) @ i c /i b = 10 v, voltage (volts) 3.0 1.0 25 c -55 c v ce = 2.0 v 150 c h fe , normalized dc current gain 0.3 0.5 0.7 3.0 2.0 0.01 0.02 0.03 0.1 0.2 0.3 1.0 5.0 0.5 3.0 2.0 v be @ v ce = 2.0 v 1.6 1.4 1.2 1.0 1.7 t j = 25 c v ce(sat) @ i c /i b = 10
bd802 http://onsemi.com 3 figure 5. thermal response t, time or pulse width (ms) 1.0 0.01 0.01 0.5 0.3 0.2 0.1 0.5 0.03 0.02 0.02 0.03 r(t), normalized effective transient thermal resistance 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000 500 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.01 0.07 0.7 7.0 70 700 d = 0 (single pulse)
bd802 http://onsemi.com 4 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bd802/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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